Optical properties of Cd1-xZnxTe films in a device structure using variable angle spectroscopic ellipsometry
Identifieur interne : 00A688 ( Main/Repository ); précédent : 00A687; suivant : 00A689Optical properties of Cd1-xZnxTe films in a device structure using variable angle spectroscopic ellipsometry
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Abstract
The optical properties of polycrystalline Cd1-xZnxTe alloy thin films in device structures are reported for energy from 0.8 to 4.6 eV. Cd1-xZnxTe alloy thin films with x from 0 to 1 were deposited on glass/indium-tin-oxide (ITO)/CdS substrates by coevaporation from CdTe and ZnTe sources and were characterized by variable angle spectroscopic ellipsometry, energy dispersive x-ray spectroscopy, and x-ray diffractometry. The Cd1-xZnxTe films are single phase with a zincblende crystal structure over the entire alloy range. The Cd1-xZnxTe optical constants were determined using a multilayer optical model incorporating the optical constants of glass, ITO and CdS, determined independently from glass, glass/ITO, and glass/ITO/CdS specimens. The optical constants of the Cd1-xZnxTe thin films are comparable to literature values reported for single crystals, indicating that the polycrystalline nature of the films does not measurably alter the optical constants. A semiconductor alloy model for determining the composition of CdxZn1-xTe alloy films is developed using the optical data obtained from the analysis. This alloy model can be used to evaluate compositional grading and the effects of Cd1-xZnxTe film processing. © 2004 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Optical properties of Cd<sub>1-x</sub>Zn<sub>x</sub>Te films in a device structure using variable angle spectroscopic ellipsometry</title><author><name sortKey="Paulson, P D" uniqKey="Paulson P">P. D. Paulson</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Delaware</region></placeName><wicri:cityArea>Institute of Energy Conversion, University of Delaware, Newark</wicri:cityArea></affiliation></author><author><name sortKey="Mccandless, B E" uniqKey="Mccandless B">B. E. Mccandless</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Delaware</region></placeName><wicri:cityArea>Institute of Energy Conversion, University of Delaware, Newark</wicri:cityArea></affiliation></author><author><name sortKey="Birkmire, R W" uniqKey="Birkmire R">R. W. Birkmire</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Delaware</region></placeName><wicri:cityArea>Institute of Energy Conversion, University of Delaware, Newark</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0109064</idno><date when="2004-03-15">2004-03-15</date><idno type="stanalyst">PASCAL 04-0109064 AIP</idno><idno type="RBID">Pascal:04-0109064</idno><idno type="wicri:Area/Main/Corpus">00BE27</idno><idno type="wicri:Area/Main/Repository">00A688</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cadmium compounds</term><term>Crystal structure</term><term>Ellipsometry</term><term>Experimental study</term><term>II-VI semiconductors</term><term>Optical constants</term><term>Semiconductor growth</term><term>Semiconductor thin films</term><term>Vapor deposition</term><term>X-ray chemical analysis</term><term>XRD</term><term>Zinc compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7866H</term><term>7820C</term><term>6855J</term><term>8115K</term><term>8280E</term><term>Etude expérimentale</term><term>Semiconducteur II-VI</term><term>Dépôt phase vapeur</term><term>Constante optique</term><term>Structure cristalline</term><term>Ellipsométrie</term><term>Analyse chimique RX</term><term>Diffraction RX</term><term>Cadmium composé</term><term>Zinc composé</term><term>Couche mince semiconductrice</term><term>Croissance semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The optical properties of polycrystalline Cd<sub>1-x</sub>Zn<sub>x</sub>Te alloy thin films in device structures are reported for energy from 0.8 to 4.6 eV. Cd<sub>1-x</sub>Zn<sub>x</sub>Te alloy thin films with x from 0 to 1 were deposited on glass/indium-tin-oxide (ITO)/CdS substrates by coevaporation from CdTe and ZnTe sources and were characterized by variable angle spectroscopic ellipsometry, energy dispersive x-ray spectroscopy, and x-ray diffractometry. The Cd<sub>1-x</sub>Zn<sub>x</sub>Te films are single phase with a zincblende crystal structure over the entire alloy range. The Cd<sub>1-x</sub>Zn<sub>x</sub>Te optical constants were determined using a multilayer optical model incorporating the optical constants of glass, ITO and CdS, determined independently from glass, glass/ITO, and glass/ITO/CdS specimens. The optical constants of the Cd<sub>1-x</sub>Zn<sub>x</sub>Te thin films are comparable to literature values reported for single crystals, indicating that the polycrystalline nature of the films does not measurably alter the optical constants. A semiconductor alloy model for determining the composition of Cd<sub>x</sub>Zn<sub>1-x</sub>Te alloy films is developed using the optical data obtained from the analysis. This alloy model can be used to evaluate compositional grading and the effects of Cd<sub>1-x</sub>Zn<sub>x</sub>Te film processing. © 2004 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>95</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Optical properties of Cd<sub>1-x</sub>Zn<sub>x</sub>Te films in a device structure using variable angle spectroscopic ellipsometry</s1></fA08><fA11 i1="01" i2="1"><s1>PAULSON (P. D.)</s1></fA11><fA11 i1="02" i2="1"><s1>MCCANDLESS (B. E.)</s1></fA11><fA11 i1="03" i2="1"><s1>BIRKMIRE (R. W.)</s1></fA11><fA14 i1="01"><s1>Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>3010-3019</s1></fA20><fA21><s1>2004-03-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0109064</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The optical properties of polycrystalline Cd<sub>1-x</sub>Zn<sub>x</sub>Te alloy thin films in device structures are reported for energy from 0.8 to 4.6 eV. Cd<sub>1-x</sub>Zn<sub>x</sub>Te alloy thin films with x from 0 to 1 were deposited on glass/indium-tin-oxide (ITO)/CdS substrates by coevaporation from CdTe and ZnTe sources and were characterized by variable angle spectroscopic ellipsometry, energy dispersive x-ray spectroscopy, and x-ray diffractometry. The Cd<sub>1-x</sub>Zn<sub>x</sub>Te films are single phase with a zincblende crystal structure over the entire alloy range. The Cd<sub>1-x</sub>Zn<sub>x</sub>Te optical constants were determined using a multilayer optical model incorporating the optical constants of glass, ITO and CdS, determined independently from glass, glass/ITO, and glass/ITO/CdS specimens. The optical constants of the Cd<sub>1-x</sub>Zn<sub>x</sub>Te thin films are comparable to literature values reported for single crystals, indicating that the polycrystalline nature of the films does not measurably alter the optical constants. A semiconductor alloy model for determining the composition of Cd<sub>x</sub>Zn<sub>1-x</sub>Te alloy films is developed using the optical data obtained from the analysis. 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